منابع مشابه
Interfacial phase-change memory.
Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...
متن کاملProjected phase-change memory devices
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected...
متن کاملThermal Transport in Phase Change Memory Materials
Phase change memory uses brief pulses of electrical current to induce phase transitions in chalcogenide material regions with dimensions near or even far below 50 nm. The strongly differing electrical conductivities of the crystalline and amorphous phases allow data storage at densities in excess of terabits per square inch. Nanoscale conduction heat transfer governs the figures of merit in the...
متن کاملSelf-aligned nanotube-nanowire phase change memory.
A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the smallest and most energy-efficient devices that can function reliably. Unlike charge-based electronics that are prone to leakage at nanoscale dimensions, memory devices based on phase change materials (PCMs) are more scalable, storing digital information as the crystalline or amorphous state of a material...
متن کاملDense Approximate Storage in Phase-Change Memory
Multi-level phase-change memory stores bits by quantizing the resistance value of each cell. For example, a PCM cell with four distinct resistance levels can store two bits. By dramatically increasing this granularity, high density can be achieved at the cost of storage reliability. Many applications—those that deal with sensory data or are otherwise resilient to errors—can take advantage of th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China Information Sciences
سال: 2011
ISSN: 1674-733X,1869-1919
DOI: 10.1007/s11432-011-4223-x